Nakamura lab. develops new material creating or conserving energy by using ultrahigh density Si-based nanodots.

Papers


2021

[4] Takafumi Ishibe, Atsuki Tomeda, Yuki Komatsubara, Reona Kitaura, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, and Yoshiaki Nakamura, ”Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator”, Applied Physics Letters. accepted

[3] Yuki Komatsubara, Takafumi Ishibe, Yuji Miyato, Shunya Sakane, and Yoshiaki Nakamura, ”Direct mapping of temperature-difference-induced potential variation under non-thermal equilibrium”, Applied Physics Letters 118, 091605-1-6 (2021). DOI: https://doi.org/10.1063/5.0038363
This paper is selected as featured article (on March 1, 2021).

[2] Tatsuhiko Taniguchi, Tsukasa Terada, Yuki Komatsubara, Takafumi Ishibe, Kento Konoike, Atsushi Sanada, Nobuyasu Naruse, Yutaka Mera, and Yoshiaki Nakamura, “Phonon transport in nano-system of Si and SiGe films with Ge nanodots and approach to ultralow thermal conductivity”, Nanoscale 13, 4971-4977 (2021). DOI:  10.1039/D0NR08499A

[1] Shunya Sakane, Takafumi Ishibe, Kosei Mizuta, Takeshi Fujita, Yuga Kiyofuji, Jun-ichiro Ohe, Eiichi Kobayashi and Yoshiaki Nakamura, “Anomalous enhancement of thermoelectric power factor by thermal management with resonant level effect”, Journal of Materials Chemistry A 9, 4851-4857 (2021). DOI:  10.1039/D0TA08683E
*Press Release


2020

[11] Kenji Ito, Hideyuki Nakano, and Yoshiaki Nakamura, “Formation of Silicon Quantum Dots Sheet on a Nonmetallic CaF2 Surface”, Advanced Materials Interfaces 7, 2001295 (2020). DOI: https://doi.org/10.1002/admi.202001295

[10] Tatsuhiko Taniguchi,Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano,Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, and Yoshiaki Nakamura, “Thermoelectric Si1-xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators”, Applied Physics Letter 117, 141602 (2020). DOI: https://doi.org/10.1063/5.0023820

[9] Y. Shimanuki, S. Yamada, A. Masago, T. Ishibe, K. Kudo, Y. Nakamura, and K. Hamaya, “Control of thermoelectric properties in Mn-substituted Fe2TiSi epilayers”, Physical Review B 102, 054203 (2020). DOI: https://link.aps.org/doi/10.1103/PhysRevB.102.054203

[8] Kosuke Mitarai, Ryo Okuhata, Jinichiro Chikada, Tatsuya Kaneko, Yuto Uematsu, Yuki Komatsubara, Takafumi Ishibe, Yoshiaki Nakamura, “An advanced 2ω method enabling thermal conductivity measurement for various sample thicknesses: From thin films to bulk materials”, Journal of Applied Physics 128, 015102 (2020). DOI: https://doi.org/10.1063/5.0007302

[7] Tatsuhiko Taniguchi, Takafumi Ishibe, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura, “High Thermoelectric Power Factor Realization in Si-rich SiGe/Si Superlattices by Super-Controlled Interface”, ACS Applied Materials & Interfaces 12, 25428-25434 (2020). DOI: https://dx.doi.org/10.1021/acsami.0c04982

[6] Takafumi Ishibe, Yuto Uematsu, Nobuyasu Naruse, Yutaka Mera, and Yoshiaki Nakamura, “Impact of metal silicide nanocrystals on the resistance ratio in resistive switching of epitaxial Fe3O4 films on Si substrates”, Applied Physics Letters 116, 181601 (2020). DOI: https://doi.org/10.1063/1.5143960

[5] Yuto Uematsu, Tsukasa Terada, Kento Sato, Takafumi Ishibe, and Yoshiaki Nakamura, “Low thermal conductivity in single crystalline epitaxial germanane films”, Applied Physics Express 13, 055503 (2020). DOI: https://doi.org/10.35848/1882-0786/ab8726

[4] Takafumi Ishibe, Yoshiki Maeda, Tsukasa Terada, Nobuyasu Naruse, Yutaka Mera, Eiichi Kobayashi, and Yoshiaki Nakamura, “Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces”, Science and Technology of Advanced Materials 21, 195-204 (2020). DOI: https://doi.org/10.1080/14686996.2020.1736948

[3] Y. Shimanuki, K. Kudo, T. Ishibe, A. Masago, S. Yamada, Y. Nakamura, and K. Hamaya, “Thermoelectric properties of single-phase full-Heusler alloy Fe2TiSi films with D03-type disordering”, Journal of Applied Physics 127, 055106 (2020). DOI: https://doi.org/10.1063/1.5141949

[2] Shunya Sakane, Takafumi Ishibe, Kosei Mizuta, Masato Kashino, Kentaro Watanabe, Takeshi Fujita, Yoshinari Kamakura, Nobuya Mori, and Yoshiaki Nakamura, “Methodology of Thermoelectric Power Factor Enhancement by Nanoscale Thermal Management in Bulk SiGe Composites”, ACS Applied Energy Materials 3, 1235-1241 (2020). DOI: https://doi.org/10.1021/acsaem.9b02340

[1] Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Takahiro Hinakawa, Ryoya Hosoda, Kosei Mizuta, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura, “Nanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots”, Japanese Journal of Applied Physics 59, SFFB01-1-5 (2020). DOI: https://doi.org/10.7567/1347-4065/ab5b58


2019

[6] Takahiro Kojima, Takahiro Nakae, Zhen Xu, Chinnusamy Saravanan, Kentaro Watanabe, Yoshiaki Nakamura, and Hiroshi Sakaguchi, “Bottom‐Up On-Surface Synthesis of Two‐Dimensional Graphene Nanoribbon Networks and Their Thermoelectric Properties”, Chemistry – An Asian Journal 14, 4400-4407 (2019). DOI: https://doi.org/10.1002/asia.201901328

[5] Shunya Sakane, Takafumi Ishibe, Takahiro Hinakawa, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, Yoshiaki Nakamura “High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity”, Applied Physics Letters 115, 182104 (2019). DOI: https://doi.org/10.1063/1.5126910

featured article

[4] Tsukasa Terada, Takafumi Ishibe, and Yoshiaki Nakamura, “Modulation of lattice constants by changing the composition and strain in incommensurate Nowotny chimney-ladder phase FeGeγ epitaxially grown on Si”, Surface Science 690, 121470 (2019). DOI: https://doi.org/10.1016/j.susc.2019.121470

[3] Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, and Yoshiaki Nakamura, “Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures”, Materials Today Energy 13, 56-63 (2019). DOI: https://doi.org/10.1016/j.mtener.2019.04.014

[2] Y. Nakamura, T. Ishibe, T. Taniguchi, T. Terada, R. Hosoda, S. Sakane, “Semiconductor Nanostructure Design for Thermoelectric Property Control”, International Journal of Nanoscience 18, 19040036-1-8 (2019). DOI: https://www.worldscientific.com/doi/abs/10.1142/S0219581X19400362

[1] K. Kudo, S. Yamada, J. Chikada, Y. Shimanuki, T. Ishibe, S. Abo, H. Miyazaki, Y. Nishino, Y. Nakamura, and K. Hamaya, “Significant reduction in the thermal conductivity of Si-substituted Fe2VAl epilayers”, Physical Review B 99, 054201-1-7 (2019). DOI: https://doi.org/10.1103/PhysRevB.99.054201


2018

[11] Takafumi Ishibe, Atsuki Tomeda, Kentaro Watanabe, Yoshinari Kamakura, Nobuya Mori, Nobuyasu Naruse, Yutaka Mera, Yuichiro Yamashita, and Yoshiaki Nakamura, “Methodology of thermoelectric power factor enhancement by controlling nanowire interface” ACS Applied Materials & Interfaces 10, 37709-37716 (2018). DOI: http://doi.org/10.1021/acsami.8b13528
*Press Release

[10] Tatsuhiko Taniguchi, Takafumi Ishibe, Hiroki Miyamoto, Yuichiro Yamashita, and Yoshiaki Nakamura, “Thermoelectric properties of epitaxial Ge thin films on Si(001) with strong crystallinity dependence” Applied Physics Express 11, 111301-1-4 (2018). DOI: https://doi.org/10.7567/APEX.11.111301

[9] Atsuki Tomeda⁠, Takafumi Ishibe, Tatsuhiko Taniguchi, Ryo Okuhata⁠, Kentaro Watanabe, Yoshiaki Nakamura, “⁠Enhanced thermoelectric performance of Ga-doped ZnO film by controlling crystal quality for transparent thermoelectric films” Thin Solid Films 666, 185-190 (2018). DOI:  https://doi.org/10.1016/j.tsf.2018.09.045

[8] Takafumi Ishibe, Tsubasa Kurokawa, Nobuyasu Naruse,and Yoshiaki Nakamura, “Resistive switchingat the high quality metal/insulator interface in Fe3O4/SiO2/a-FeSi2/Si stacking structure”, Applied Physics Letters 113, 141601-1-5 (2018). DOI: https://doi.org/10.1063/1.5048827

[7] Takafumi Ishibe, Tatsuhiko Taniguchi,Tsukasa Terada, Atsuki Tomeda, Kentaro Watanabe,and Yoshiaki Nakamura*, “Areal density control of ZnO nanowires in physical vapor transport using Ge nanocrystals”, Japanese Journal of Applied Physics 57, 08NB07-1-5 (2018).

[6] Tsukasa Terada, Takafumi Ishibe, Kentaro Watanabe,and Yoshiaki Nakamura*, “Growth of epitaxial FeGeg nanocrystals with incommensurate Nowtny chimney-ladder phase on Si substrate”, Japanese Journal of Applied Physics 57, 08NB01-1-4 (2018).

[5] 中村芳明, 谷口達彦, 寺田吏, “熱電応用に向けたナノドット含有階層構造によるフォノン散乱の促進” 表面と真空, 61(5), 296-301 (2018).

[4] Takafumi Oyake, Lei Feng, Takuma Shiga, Masayuki Isogawa, Yoshiaki Nakamura, and Junichiro Shiomi, “Ultimate Confinement of Phonon Propagation in Silicon Nanocrystalline Structure” Physical Review Letters 120(4), 045901-1~6 (2018).

[3] Kohei Kudo, Shinya Yamada, Jinichiro Chikada, Yuta Shimakuni, Yoshiaki Nakamura, and Kohei Hamaya, “Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films” Japanese Journal of Applied Physics 57, 040306-1-4 (2018).

[2] Hideki Matsui, Takafumi Ishibe, Tsukasa Terada, Shunya Sakane, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Shigeru Kimura, and Yoshiaki Nakamura*, “Resistive switching characteristics of isolated core-shell iron oxide / germanium nanocrystals epitaxially grown on Si substrates” Applied Physics Letters 112, 031601-1~5 (2018).

[1] (Review) Yoshiaki Nakamura*, “Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity” Science and Technology of Advanced Materials 19(1), 31-43 (2018).


2017

[7] Shinya Yamada, Kohei Kudo, Ryo Okuhata, Jinichiro Chikada, Yoshiaki Nakamura, and Kohei Hamaya,

“Low thermal conductivity of thermoelectric Fe2VAl films”

Applied Physics Express 10, 115802-1-4 (2017).

[6] Dinh Thanh Khan, Shotaro Takeuchi, Yoshiaki Nakamura, Kunihiko Nakamura, Takuji Arauchi, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, and Akira Sakai

“Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction”

Japanese Journal of Applied Physics 56 (2), 025502-1~5 (2017).

[5] Kentaro Watanabe, Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Takeyuki Suzuki, Takeshi Fujita, and Yoshiaki Nakamura*,

“Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities”

Japanese Journal of Applied Physics 56, 05DC04 (2017).

[4] Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Ryo Okuhata, Takafumi Ishibe, Kentaro Watanabe, Takeyuki Suzuki, Takeshi Fujita, Kentarou Sawano, and Yoshiaki Nakamura*,

“Thermoelectric properties of epitaxial β-FeSi2 thin films/Si(111) and enhancement approach of its thermoelectric performance”

Journal of Electronic Materials 46, 3235 (2017).

[3] Takafumi Ishibe, Atsuki Tomeda, Kentaro Watanabe, Jun Kikkawa, Takeshi Fujita, and Yoshiaki Nakamura*,

“Embedded-ZnO Nanowire Structure for High-Performance Transparent Thermoelectric Materials”

Journal of Electronic Materials 46, 3020 (2017).

[2] Ryo Okuhata, Kentaro Watanabe, Satoaki Ikeuchi, Akihiro Ishida, and Yoshiaki Nakamura*,

“Thermal Conductivity Measurement of Thermoelectric Thin Films by a Versatility-Enhanced 2ω Method”

Journal of Electronic Materials 46, 3089 (2017).

[1] Shunya Sakane, Masayuki Isogawa, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, and Yoshiaki Nakamura*

“Epitaxial multilayers of β-FeSi2 nanodots/Si for Si-based nanostructured electronic materials”

Journal of Vacuum Science and Technology A 35(4), 041402 (2017).


2016

[6] Takafumi Ishibe, Kentaro Watanabe, and Yoshiaki Nakamura*,

“Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates”

Japanese Journal of Applied Physics 55, 08NB12 (2016).

[5] Akihiro Ishida, Hoang Thi Xuan Thao, Mamoru Shibata, Seisuke Nakashima, Hirokazu Tatsuoka, Hidenari Yamamoto, Yohei Kinoshita, Mamoru Ishikiriyama, and Yoshiaki Nakamura,

“Amorphous / epitaxial superlattice for thermoelectric application”

Japanese Journal of Applied Physics 55, 081201 (2016).

[4] Takafumi Ishibe, Hideki Matsui, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, and Yoshiaki Nakamura*,

“Epitaxial iron oxide nanocrystals with memory function grown on Si substrates”

Applied Physics Express 9, 055508 (2016).

[3] Shuto Yamasaka, Kentaro Watanabe, Shunya Sakane, Shotaro Takeuchi, Akira Sakai, Kentarou Sawano, and Yoshiaki Nakamura*

“Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials.”

Scientific Reports 6, 22838 (2016).

[2] Kentaro Watanabe*, Takahiro Nagata, Seungjun Oh, Yutaka Wakayama, Takashi Sekiguchi, János Volk, and Yoshiaki Nakamura

“Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods.”

Nature Communications 7, 10609 (2016).

[1] Tomohiro Ueda, Shunya Sakane, Takafumi Ishibe, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, and Yoshiaki Nakamura*

“Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique.”

Journal of Electronic Materials 45, 1914 (2016).


2015

[9] S. Takeuchi, H. Asazu, M. Imanishi, Y. Nakamura, M. Imade, Y. Mori, and A. Sakai,

“Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN”

Journal of Applied Physics 118, 245306 (2015).

[8] Shuto Yamasaka, Yoshiaki Nakamura*, Tomohiro Ueda, Shotaro Takeuchi & Akira Sakai,

Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials.

Scientific Reports 5, 14490 (2015).

[7] Yoshiaki Nakamura and Masakazu Ichikawa,

“Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application.”

Japanese Journal of Applied Physics 54, 07JD01 (2015)

[6] Shuto Yamasaka, Yoshiaki Nakamura*, Tmohiro Ueda, Shotaro Takeuchi, Yuta Yamamoto, Shigeo, Arai, Takayoshi Tanji, Nobuo Tanaka and Akira Sakai,

“Fabrication of Si thermoelectric nanomaterials containing ultrasmall epitaxial Ge nanodots with an ultrahigh density.”

Journal of Electronic Materials 44, 2015 (2015).

[5] Yoshiaki Nakamura*, Masayuki Isogawa, Tomohiro Ueda, Shuto Yamasaka, Hideki Matsui, Jun Kikkawa, Satoaki Ikeuchi,Takafumi Oyake, Takuma Hori, Junichiro Shiomi, Akira Sakai,

“Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material.”

Nano Energy 12, 845 (2015).
*Press Release

[4] Takuji Arauchi, Shotaro Takeuchi, Yasuhiro Hashimoto, Yoshiaki Nakamura, Keisuke Yamane, Narihito Okada, Yasuhiko Imai, Shigeru Kimura, Kazuyuki Tadatomo, and Akira Sakai,

“Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy.”

Physica Status Solidi B 252(5), 1149–1154 (2015).

[3] Shotaro Takeuchi, Toshiro Uchiyama, Takuji Arauchi, Yasuhiro Hashimoto, Yoshiaki Nakamura, Keisuke Yamane, Narihito Okada, Kazuyuki Tadatomo, and Akira Sakai,

“Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates.”

Physica Status Solidi B 252(5), 1142–1148 (2015).

[2] D. T. Khan, S.Takeuchi, Yoshiaki Nakamura, K.Nakamura , T.Arauchi, H.Miyake, K. Hiramatsu, Y.Imai, S.Kimura, A.Sakai,

“Microscopic crystalline structure of a thick AlN film grown on atrench-patternedAlN/α-Al2O3 template.”

Journal of Crystal Growth 411, 38-44 (2015).

[1] Kazuki Tanaka, Yoshiaki Nakamura, Shuto Yamasaka, Jun Kikkawa,Takenobu Sakai, Akira Sakai,

“Formation and optical properties of Ge films grown on Si(111) substrates using nanocontact epitaxy.”

Applied Surface Science 325, 170-174 (2015).


2014

Yoshihiko Moriyama, Keiji Ikeda, Shotaro Takeuchi, Yuuichi Kamimuta, Yoshiaki Nakamura, Koji Izunome, Akira Sakai, and Tsutomu Tezuka,

“Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers.”

Applied Physics Express 7, 086501-1-4 (2014).

[8] Masayuki Shimonaka, Yoshiaki Nakamura, Jun Kikkawa, and Akira Sakai,

“Self-assembly of Ge clusters on highly oriented pyrolytic graphite surfaces.”

Surface Science 628, 82-85 (2014).

[7] Takuji Arauchi, Shotaro Takeuchi, Kunihiko Nakamura, Dinh Thanh Khan, Yoshiaki Nakamura, Hideto Miyake, Kazumasa Hiramatsu, and Akira Sakai,

“Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template.”

Physica Status Solidi A 211, 731-735 (2014).

[6] Hirotada Asazu, Shotaro Takeuchi, Hiroya Sannai, Haruo Sudo, Koji Araki, Yoshiaki Nakamura, Koji Izunome, and Akira Sakai,

“Dislocation behavior of surface-oxygen-concentration controlled Si wafers.”

Thin Solid Films 557, 106 (2014).

[5] Shuto Yamasaka, Yoshiaki Nakamura, Osamu Yoshitake, Jun Kikkawa, Koji Izunome, and Akira Sakai,

“Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrate.”

Physica Status Solidi A 211(3), 601-605 (2014).

[4] Shogo Amari, Yoshiaki Nakamura, and Masakazu Ichikawa,

“Luminescence properties of Si-capped beta-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates.”

Journal of Applied Physics 115(8), 084306-1-5 (2014).

[3] Yoshiaki Nakamura, Ryota Sugimoto, Takafumi Ishibe, Hideki Matsui, Jun Kikkawa,and Akira Sakai,

“Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface.”

Journal of Applied Physics 115(4), 044301-1-5 (2014).

[2] Nobuyasu Naruse, Yoshiaki Nakamura, Yutaka Mera, Masakazu Ichikawa, and Koji Maeda,

“Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots.”

Journal of Vacuum Science & Technology B 32(1), 011803-1-6 (2014).

[1] A. A. Shklyaev, O. A. Shegai, Y. Nakamura, and M. Ichikawa,

“Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces.”

Journal of Applied Physics 115, 203702 (2014).


2013

D. T. Khan, S. Takeuchi, J. Kikkawa, Yoshiak Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, and A. Sakai,

“Cross-sectionalX-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template.”

Journal of Crystal Growth 381, 37-42 (2013).

[8] Hironobu Hamanaka, Yoshiaki Nakamura, Takafumi Ishibe, Jun Kikkawa, and Akira Sakai,

“Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas.”

Journal of Applied Physics 114(11), 114309-1~5 (2013).

[7] Wataru Ikeda, Yoshiaki Nakamura, Shogo Okamoto, Shotaro Takeuchi, Jun Kikkawa, Masakazu Ichikawa, and Akira Sakai,

“Characterization of Ge films on Si(001) substrates grown by nanocontact epitaxy.”

Japanese Journal of Applied Physics 52(9), 095503-1-4 (2013).

[6] Kentaro Watanabe*, Yoshiaki Nakamura, and Masakazu Ichikawa,

“Conductive optical-fiber STM probe for local excitation and collection of cathodoluminescence at semiconductor surfaces.”

Optics Express 21, 16, 19261-19268 (2013).

*Research Highlight by “Advances in Engineering”

[5] Sung-Pyo Cho, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu, Ichikawa and Nobuo Tanaka,

“Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces.”

Journal of Applied Crystallography 46(4), 1076-1080 (2013).

[4] Yoshihiko Moriyama, Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Toshifumi Irisawa,YoshiakiNakamura, Akira Sakai, and Tsutomu Tezuka,

“Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers.”

Solid-State Electronics 83, 42-45 (2013).

[3] Jun Kikkawa, Yoshiaki Nakamura, Norihito Fujinoki, and Masakazu Ichikawa,

“Investigating the origin of intense photoluminescence in Si capping layer on Ge1-xSnx nanodots by transmission electron microscopy.”

Journal of Applied Physics 113(7), 074302-1-6 (2013).

[2] M. Yamashita, Yoshiaki Nakamura, A. Yamamoto, J. Kikkawa, K. Izunome, A. Sakai,

“Structural analysis of vicinal Si(110) surfaces with various off-angles.”

Applied Surface Science 267(15), 136-140 (2013).

[1] M. Yamashita, Yoshiaki Nakamura, R. Sugimoto, J. Kikkawa, K. Izunome, A. Sakai,

“Formation mechanism of peculiar structures on vicinal Si(110) surfaces.”

Applied Surface Science 267(15), 53-57 (2013).


2012

Kentaro Watanabe*, Masakazu Ichikawa, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, and Kentaro Onabe,

“Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure.”

Journal of Vacuum Science & Technology B 30(2), 021802-1-6 (2012).

[2] S. Harada, J. Kikkawa, Yoshiaki Nakamura, G. Wang, M. Caymax, A. Sakai,

“Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates.”

Thin Solid Films 520(8), 3245-3248 (2012).

[1] Yoshiaki Nakamura, Norihito Fujinoki and Masakazu Ichikawa,

“Luminescence at 1.5μm from Si/GeSn nanodot/Si structures.”

Journal of Physics D: Applied Physics 45(3), 035304-1-5 (2012).


2011

Nobuyasu Naruse, Yoshiaki Nakamura, Yutaka Mera, Masakazu Ichikawa, Koji Maeda,

“Photoabsorption properties of β-FeSi2 nanoislands grown on Si(111) and Si(001): Dependence on substrate orientation studied by nano-spectroscopic measurements.”

Thin Solid Films 519(24), 8477-8479 (2011).

[12] Yoshiaki Nakamura, Kenjiro Fukuda, Shogo Amari, Masakazu Ichikawa,

“Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique.”

Thin Solid Films 519(24), 8512-8515 (2011).

[11] Masahiko Takahashi, Yoshiaki Nakamura, Jun Kikkawa, Osamu Nakatsuka, Shigeaki Zaima, and Akira Sakai,

“Structural analysis of Si-based nanodot arrays self-organized by selective etching of SiGe/Si films.”

Japanese Journal of Applied Physics 50(8), 08LB11-1-4 (2011).

[10] Kentaro Watanabe*, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, and Masakazu Ichikawa,

“Development of novel system combining scanning tunneling microscope-basedcathodoluminescence and electroluminescence nanospectroscopies.”

Japanese Journal of Applied Physics 50(8), 08LB18-1-4 (2011).

[9] Yoshiaki Nakamura, Takafumi Miwa, and Masakazu Ichikawa,

“Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.”,

Nanotechnology 22(26), 265301-1-7 (2011).

[8] Kazuya Isiizumi, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, and Junichi Yanagisawa,

“Effect of low-energy Ga ion implantation on selective growth of gallium nitride layer on silicon nitride surfaces using metal rrganic chemical vapor deposition.”

Japanese Journal of Applied Physics 50(6), 06GC02-1-4 (2011).

[7] Yoshiaki Nakamura, Akiyuki Murayama, and Masakazu Ichikawa,

“Epitaxial growth of high quality Ge films on Si(001) substrates by nanocontact epitaxy.”

Crystal Growth & Design 11(7) 3301-3305 (2011).

[6] Kouhei Ebihara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Gang Wang, Matty Caymax, Yasuhiko Imai, Shigeru Kimura, Osami Sakata,

“X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(0 0 1) substrates.”

Solid State Electronics 60(1), 26-30 (2011).

[5] Osamu Yoshitake, Jun Kikkawa, Yoshiaki Nakamura, Eiji Toyoda, Hiromichi Isogai, Koji Izunome, and Akira Sakai,

“Annealing effects on Ge/SiO2 interface structure in wafer-bonded germanium-on-insulator substrates.”

Japanese Journal of Applied Physics 50(4), 04DA13-1-4 (2011).

[4] Yuji Iwasaki, Yoshiaki Nakamura, Jun Kikkawa, Motoki Sato, Eiji Toyoda, Hiromichi Isogai, Koji Izunome, and Akira Sakai,

“Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor.”

Japanese Journal of Applied Physics 50(4), 04DA14-1-4 (2011).

[3] Yoshiaki Nakamura, Masahiko Takahashi, Tatsuki Fujiwara, Jun Kikkawa, Akira Sakai, Osamu Nakatsuka, and Shigeaki Zaima,

“Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network.”

Journal of Applied Physics 109(4), 044301-1-4 (2011).

[2] K. Minami, Yoshiaki Nakamura, S. Yamasaka, O. Yoshitake, J. Kikkawa, K. Izunome, A. Sakai,

“Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method.”

Thin Solid Films 520(8), 3232-3235 (2011).

[1] Yoshiaki Nakamura, Shogo Amari, Sung-Pyo Cho, Nobuo Tanaka, and Masakazu Ichikawa,

“Formation and magnetic properties of ultrahigh density Fe3Si nanodots epitaxially grown on Si(111) Substrates covered with ultrathin SiO2 Films.”

Japanese Journal of Applied Physics 50(1), 015501-1-7 (2011).


2010

Yoshiaki Nakamura, Akiyuki Murayama, Ryoko Watanabe, Tomokazu Iyoda and Masakazu Ichikawa,

“Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates.”

Nanotechnology 21(9), 095305-1-5 (2010).

[2] T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata,

“Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing.”

Thin Solid Films 518(6), S147-S150 (2010).

[1] 中村芳明, 村山昭之, 渡邉亮子, 彌田智一, 市川昌和,

極薄Si酸化膜を用いたエピタキシャル量子ドット二次元ナノ配列構造の自己組織化と自己修復,

表面科学 31(12), 626-631 (2010).


2009

Yoshiaki Nakamura, Norihiko Fujinoki, and Masakazu Ichikawa,

“Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO2 film technique.”

Journal of Applied Physics 106(1), 014309-1-4 (2009).

[5] Kentaro Watanabe*, Yoshiaki Nakamura, and Masakazu Ichikawa, Shigeyuki Kuboya, Ryuji Katayama, and Kentaro Onabe,

“Scanning tunneling microscope.cathodoluminescence measurement of the GaAs/AlGaAs heterostructure.”

Journal of Vacuum Science & Technology B 27(4), 1874-1880 (2009).

[4] Alexander A. Shklyaev, Yoshiaki Nakamura, Fedor Dultsev, and Masakazu Ichikawa,

“Defect-related light emission in the 1.4-1.7-μm range from Si layers at room temperature.”

Journal of Applied Physics 105(6), 063513-1-4 (2009).

[3] Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa, and Koji Maeda,

“Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots.”

Applied Physics Letters 94(9), 093104-1-3 (2009).

[2] S.-P. Cho, Yoshiaki Nakamura, Masakazu Ichikawa, and Nobuo Tanaka,

“HRTEM study of structures of iron-silicide nanodots grown on faintly oxidized Si(111) surfaces.”

Thin Solid Films 517(9), 2865-2870 (2009).

[1] Yoshiaki Nakamura, Tomohiro Sugimoto, and Masakazu Ichikawa,

“Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique.”

Journal of Applied Physics 105(1), 014308-1-4 (2009).


2008

Masakazu Ichikawa, Seiichiro Uchida, A. A. Shklyaev, Yoshiaki Nakamura, S.-P. Cho, and Nobuo Tanaka,

“Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technology.”

Applied Surface Science 255(3), 669-671 (2008).

[7] Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa, and Koji Maeda,

“Electric field modulation nano-spectroscopy for characterization of individual β-FeSi2 nanodots.”

Journal of Applied Physics 104(7), 074321-1-6 (2008).

[6] Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda,

“Giant fullerenes formed on C60 films irradiated with electrons field-emitted from scanning tunneling microscope tips.”

Applied Surface Science 254(23), 7881-7884 (2008).

[5] Kentaro Watanabe*, Yoshiaki Nakamura, Masakazu Ichikawa,

“Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy.”

Applied Surface Science 254(23), 7737-7741 (2008).

[4] Yoshiaki Nakamura, Seigo Amari, Nobuyasu Naruse, Yutaka Mera, Koji Maeda, and Masakazu Ichikawa,

“Self-assembled epitaxial growth of high density β-FeSi2 nanodots on Si (001) and their spatially resolved optical absorption properties.”

Crystal Growth & Design 8(8), 3019-3023 (2008).

[3] Kentaro Watanabe*, Yoshiaki Nakamura, Masakazu Ichikawa,

“Local optical characterization related to Si cluster concentration in GaAs using scanning tunneling microscope cathodoluminescence spectroscopy.”

Japanese Journal of Applied Physics 47(7), 6109-6113 (2008).

[2] Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa, and Koji Maeda,

“The enhanced signal of subgap centers in tip-probing photoabsorption spectroscopy with an assist of a subsidiary light.”

Journal of Applied Physics 103(4), 044303-1-4 (2008).

[1] Kentaro Watanabe*, Yoshiaki Nakamura, and Masakazu Ichikawa,

“Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy.”

Journal of Vacuum Science & Technology B 26(1), 195-200 (2008).


2007

Yoshiaki Nakamura, Akiko Masada, Sung-Pyo Cho, Nobuo Tanaka, and Masakazu Ichikawa,

“Epitaxial growth of ultrahigh density Ge1-xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films”,

J. Appl. Phys. 102(12), 124302-1-6 (2007).

[9] Nobuyasu Naruse, Yutaka Mera, Yo Fukuzawa, Yoshiaki Nakamura, Masakazu Ichikawa, and Koji Maeda,

“Fourier transform photoabsorption spectroscopy based on scanning tunneling microscopy”,

J. Appl. Phys. 102, 11, 114301-1-6 (2007).

[8] Yasuo Nakayama, Keiko Takase, Toru Hirahara, Shuji Hasegawa, Taichi Okuda, Ayumi Harasawa, Iwao Matsuda, Yoshiaki Nakamura, and Masakazu Ichikawa,

“Quantum-Size Effect in Uniform Ge-Sn Alloy Nanodots Observed by Photoemission Spectroscopy”,

Jpn. J. Appl. Phys. 46, 47, L1176 – L1178 (2007).

[7] Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa and Koji Maeda,

“The origin of spectral distortion in electric field modulation spectroscopy based on scanning tunneling microscopy”,

Surf. Sci. 601, 22, 5300-5303 (2007).

[6] Y. Mera, M. Yoshino, Yoshiaki Nakamura, K. Saishu and K. Maeda,

“Polymerization and depolymerization of fullerenes induced by hole injection from scanning tunneling microscope tips”,

Surf. Sci. 601, 22, 5207-5211 (2007).

[5] Yoshiaki Nakamura, Akiko Masada, and Masakazu Ichikawa,

“Quantum-confinement effect in individual Ge1-xSnx quantum dots on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy”

Appl. Phys. Lett. 91, 1, 013109-1-3 (2007).

[4] Yoshiaki Nakamura, Yutaka Mera, Koji Maeda,

“Desorption of chlorine atoms on Si (111)-(7×7) surfaces induced by hole injection from scanning tunneling microscope tips”

Surf. Sci. 601, 10, 2189-2193 (2007).

[3] Yoshiaki Nakamura, Masakazu Ichikawa, Kentaro Watanabe and Yasuhiro Hatsugai,

“Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer”

Appl. Phys. Lett. 90, 15, 153104-1-3 (2007).

[2] A. A. Shklyaev, S. P. Cho, Yoshiaki Nakamura, N. Tanaka, and M. Ichikawa,

“Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces”

J. Phys.: Condens. Matter 19, 13, 136004-1-8 (2007).

[1] A. A. Shklyaev, Yoshiaki Nakamura, and Masakazu Ichikawa,

“Photoluminescence of Si layers grown on oxidized Si surfaces”

J. Appl. Phys. 101, 3, 033532-1-5 (2007).


2006

[5] Yoshiaki Nakamura, Ryota Suzuki, Masafumi Umeno, Sung-Pyo Cho, Nobuo Tanaka, and Masakazu Ichikawa, Observation of the quantum-confinement effect in individual β-FeSi2 nanoislands epitaxial grown on Si (111) surfaces using scanning tunneling spectroscopy, Appl. Phys. Lett. 89, 12, 123104-1-3 (2006).

[4] Yoshiaki Nakamura, Hiroyuki Takata, Akiko Masada, and Masakazu Ichikawa, Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips, Surf. Sci. 600, 17, 3456-3460 (2006).

[3] Yoshiaki Nakamura, Yasushi Nagadomi, Sung-Pyo Cho, Nobuo Tanaka, and Masakazu Ichikawa, Formation of ultrahigh density and ultrasmall coherent β-FeSi2 nanodots on Si (111) substraets using Si and Fe codeposition method, J. Appl. Phys. 100, 4, 044313-1-5 (2006).

[2] A. A. Shklyaev, S. Nobuki, S. Uchida, Yoshiaki Nakamura, and M. Ichikawa, Photoluminescence of Ge/Si structures grown on oxidized Si surfaces, Appl. Phys. Lett. 88, 12, 121919-1-3 (2006).

[1] A. Konchenko, Y. Nakayama, I Matsuda, S. Hasegawa, Yoshiaki Nakamura, and M. Ichikawa, Quantum confinement obseved in Ge nanodots on an oxidized Si surface, Phys. Rev. B 73, 11, 113311-1-4 (2006).


2005

[4] A. Yajima, Yoshiaki Nakamura, Yutaka Mera, Koji Maeda, STM observations of photo-induced jumps of chlorine atoms chemisorbed on Si (111)-(7×7) surface, Surf. Sci. 593, 1-3, 155-160 (2005).

[3] Yoshiaki Nakamura, Yutaka Mera, and Koji, Maeda, Role of Intermolecular separation in nanoscale patterning C60 films by local injection of electrons from scanning tunneling microscope tip, Jpn. J. Appl. Phys. 44, Part 2, 42-45, L1373-L1376 (2005).

[2] Yoshiaki Nakamura, Kentaro Watanabe, Yo Fukuzawa, and Masakazu Ichikawa, Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy, Appl. Phys. Lett. 87, 13, 133119-1-3 (2005).

[1] Yoshiaki Nakamura, Yasushi Nagadomi, Sung-Pyo Cho, Nobuo Tanaka,and Masakazu Ichikawa, Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces, Phys. Rev. B 72, 7, 075404-1-7 (2005).


2004

[2] Yoshiaki Nakamura, Fumitaka Kagawa, Koichi Kasai, Yutaka Mera, and Koji Maeda, Nonthermal decomposition of C60 polymers induced by tunneling electron injection, Appl. Phys. Lett. 85, 22, 5242-5244 (2004).

[1] Yoshiaki Nakamura, Yashushi Nagadomi , Kaoru Sugie, Noriyuki Miyata, and Masakazu Ichikawa, Formation of ultrahigh density Ge nanodots on oxidized Ge/Si(111) surfaces, J. Appl. Phys. 95, 9, 5014-5018 (2004).


2003

[3] Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda,Hopping motion of chlorine atoms on Si(100)-(2×1) surfaces induced by carrier injection from scanning tunneling microscope tips, Surf. Sci. 531, 1, 68-76 (2003).

[2] Yoshiaki Nakamura, F. Kagawa, K. Kasai, Yutaka Mera, and Koji Maeda, Cluster reactions in C60 films induced by electron injection from a scanning tunneling microscope tip, Surf. Sci. 528, 1-3, 151-155 (2003).

[1] Koji Maeda and Yoshiaki Nakamura, Spreading effects in surface reactions induced by tunneilng current injection from an STM tip, Surf. Sci. 528, 1-3, 110-114 (2003).


2002

[4] Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda, Nanoscale imaging of electronic surface transport probed by atom movements induced by scanning tunneling microsope current, Phys. Rev. Lett. 89, 26, 266805-1-4 (2002).

[3] Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda, Spatially Extended Polymerization of C60 Clusters Induced by Localized Current Injection from Scanning Tunneling Microscope Tips, Mol. Cryst. and Liq. Cryst. 386, 1, 135-138 (2002).

[2] Osamu Tonomura, Yutaka Mera, Akira Hida, Yoshiaki Nakamura, T. Meguro, Koji Maeda, Structural Change of Radiation Defects in Graphite Crystals induced by STM Probing, Appl. Phys. A 74, 2, 311-316 (2002).

[1] Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda, Chlorine Atom Diffusion on Si (111)-(7×7) Surface Enhanced by Hole Injection from Scanning Tunneling Microscope Tips, Surf. Sci. 497, 1-3, 166-170 (2002).


2001

[1] Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda, Diffusion of Chlorine Atoms on Si (111)-(7×7) Surface Enhanced by Electron Injection from Scanning Tunneling Microscope Tips, Surf. Sci. 487, 1-3, 127-134 (2001).


2000

Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda,
“In-situ Scanning Tunneling Microscopic Study of Polymerization of C60 Clusters induced by Electron Injection From the Probe Tips”,
Appl. Phys. Lett. 77(18), 2834-2836 (2000).

 


1999

Yoshiaki Nakamura, Yutaka Mera, and Koji Maeda,
“A Reproducible Method to Fabricate Atomically Sharp Tips for Scanning Tunneling Microscopy”,
Rev. Sci. Instrum. 70(8), 3373-3376 (1999).
[2] (総説) 前田康二、天清宗山、中村芳明、目良裕,
「塩素吸着シリコン表面のレーザー励起エッチング」,
表面科学 20(6), 393- 400 (June 1999).

 


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