Nakamura lab. develops new material creating or conserving energy by using ultrahigh density Si-based nanodots.

Proceedings


2017

[] Yoshiaki Nakamura and Kentaro Watanabe,

“Nanostructure design for control of phonon and electron transports”,

ECS Trans. 80 (1), 93-100 (2017).


2013

[] Y. Nakamura and M Ichikawa,

“Epitaxial Growth of Iron-Silicide Nanodots on Si Substrates Using Ultrathin SiO2 Film Technique and Their Physical Properties”,

ECS Trans. 50 (6), 65-70 (2013).


2012

[] Y. Nakamura,

“High density iron silicide nanodots formed by ultrathin SiO2 Film Technique”,

Procedia Engineering 36, 382 ? 387 (2012).[] Y. Nakamura and M. Ichikawa,”Nanocontact Epitaxy of thin films on Si Substrates using nanodot seeds fabricated by ultrathin SiO2 Film technique”,ECS Trans. 45, 41-45 (2012).

 

[] T. Kato, Y. Nakamura, P. Son, J. Kikkawa, and A. Sakai,

“Electron-beam-induced current study of electronic property change at SrTiO3 bicrystal interface induced by forming process”,

Materials Science Forum 225, 261-264 (2012).

 


2011

[] T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata,

“Structural change during the formation of directly bonded silicon substrates”,

Key Eng. Mater. 470, 158 (2011).

 

[] T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura,

“Microscopic structure of directly bonded silicon substrates”,

Key Eng. Mater. 470, 164 (2011).

 


2010

[] K. Ebihara, S. Harada, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata,

“X-ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates”,

ECS Trans. 33, 887 (2010).


 

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