ナノ構造・物性制御グループ 中村研究室
—- Nanostructure Physics Group —-

Proceedings


2017

[] Yoshiaki Nakamura and Kentaro Watanabe,
“Nanostructure design for control of phonon and electron transports”,
ECS Trans. 80 (1), 93-100 (2017).


2013

[] Y. Nakamura and M Ichikawa,
“Epitaxial Growth of Iron-Silicide Nanodots on Si Substrates Using Ultrathin SiO2 Film Technique and Their Physical Properties”,
ECS Trans. 50 (6), 65-70 (2013).


2012

[] Y. Nakamura,
“High density iron silicide nanodots formed by ultrathin SiO2 Film Technique”,
Procedia Engineering 36, 382 ? 387 (2012).[] Y. Nakamura and M. Ichikawa,”Nanocontact Epitaxy of thin films on Si Substrates using nanodot seeds fabricated by ultrathin SiO2 Film technique”,ECS Trans. 45, 41-45 (2012).

[] T. Kato, Y. Nakamura, P. Son, J. Kikkawa, and A. Sakai,
“Electron-beam-induced current study of electronic property change at SrTiO3 bicrystal interface induced by forming process”,
Materials Science Forum 225, 261-264 (2012).


2011

[] T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata,
“Structural change during the formation of directly bonded silicon substrates”,
Key Eng. Mater. 470, 158 (2011).

[] T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura,
“Microscopic structure of directly bonded silicon substrates”,
Key Eng. Mater. 470, 164 (2011).


2010

[] K. Ebihara, S. Harada, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata,
“X-ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates”,
ECS Trans. 33, 887 (2010).