Nakamura lab. develops new material creating or conserving energy by using ultrahigh density Si-based nanodots.

International Conference Talks

  • HOME »
  • International Conference Talks

International Conference Talks

2019

[5] Shunya Sakane, Takafumi Ishibe, Nobuyasu Naruse, Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, and Yoshiaki Nakamura,

“Simultaneous realization of thermoelectric power factor enhancement and thermal conductivity reduction in epitaxial Si films containing b-FeSi2 nanodots”

P7, The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-Silicide 2019), Seagaia convention center, Miyazaki, Japan (July 20-23).

[4] Takafumi Ishibe, Nobuyasu Naruse, Yuichiro Yamashita, and Yoshiaki Nakamura,

“Simultaneous realization of thermal conductivity reduction and thermoelectric power factor enhancement using ZnO nanowire interface”

TuP-07, ‘The 21st International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON21)’, Nara Kasugano International Forum “IRAKA”, Nara, Japan, (July 14-19).

[3] Tsukasa Terada, Yuto Uematsu, Takafumi Ishibe, Yuichiro Yamashita, and Yoshiaki Nakamura,

“Thermoelectric properties of layerd CaSi2 including silicene structure”

P239, ‘The 38th International Conference on Themoelectrics and The 4th Asian Conference on Themoelectrics (ICT/ACT2019)’, Gyongju Hwabaek Convention Center, Korea, (June 30 – July 4).

[2] Tatsuhiko Taniguchi, Takafumi Ishibe, Md. Mahfuz Alam, Kentarou Sawano, Nobuyasu Naruse, Yutaka Mera, and Yoshiaki Nakamura,

“Controlling comosition for high thermoelectric power factor in Si-rich SiGe/Si superlattices”

P083, ‘The 38th International Conference on Themoelectrics and The 4th Asian Conference on Themoelectrics (ICT/ACT2019)’, Gyongju Hwabaek Convention Center, Korea, (June 30 – July 4).

[1] Takafumi Ishibe, Atsuki Tomeda, Yuichiro Yamashita, and Yoshiaki Nakamura,

“Power factor enhancement by introducing dopant-controlled epitaxial interfaces in transparent embedded-ZnO nanowire structure”

410B, ‘The 38th International Conference on Themoelectrics and The 4th Asian Conference on Themoelectrics (ICT/ACT2019)’, Gyongju Hwabaek Convention Center, Korea, (June 30 – July 4).


2018

[4] Yoshiaki Nakamura and Takafumi Ishibe

“Phonon transport confinement and carrier transport control using Si-based nanostructure interfaces”

242, ‘NMHT-VI: Nanoscale and Microscale Heat Transfer 2018’, Congress and Exhibition Centre Levi Summit, Levi, Lapland, Finland, (December 2-7, 2018).

[3] Tatsuhiko Taniguchi, Takafumi Ishibe, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura

“Thermoelectric Performance in Boundary-Defect-Controlled SiGe/Si superlattice”

23P105, ‘ACSIN-14 & ICSPM26’, Sendai International Center, Sendai, Japan, (October 21-25, 2018).

[2] Takafumi Ishibe and Yoshiaki Nakamura,

“Resistive Switching Characteristics in Epitaxial Iron Oxide Nanocrystals / Si Substrates”

23E16, ‘ACSIN-14 & ICSPM26’, Sendai International Center, Sendai, Japan, (October 21-25, 2018).

[1] Tsukasa Terada, Takafumi Ishibe, and Yoshiaki Nakamura,

“Modulation of c Lattice Parameter in Epitaxial FeGeg Nanocrystals on Si”

22P001, ‘ACSIN-14 & ICSPM26’, Sendai International Center, Sendai, Japan, (October 21-25, 2018).


2017

[12] Takafumi Ishibe, Tsukasa Terada, Kentaro Watanabe, Yoshiaki Nakamura,

“Formation control of ZnO nanowires using various seed structures”

S4-52, ‘The 25th International Colloquium on Scanning Probe Microscopy (ICSPM25)’, Atagawa Heights, Shizuoka, Japan, (December 7-9, 2017).

[11] Tsukasa Terada, Takafumi Ishibe, Kentaro Watanabe, Yoshiaki Nakamura,

“Epitaxial growth of FeGeγ nanocrystals on Si substrate”

S4-53, ‘The 25th International Colloquium on Scanning Probe Microscopy (ICSPM25)’, Atagawa Heights, Shizuoka, Japan, (December 7-9, 2017).

[10] Kentaro Watanabe, Takeshi Matsumoto, Yusuke Miyazaki , Kosuke Mitarai, Ryo Okuhata, and Yoshiaki Nakamura,

“Thermal conductivity measurements of vertical nanowall structures using organic embedding medium”

S4-54, ‘The 25th International Colloquium on Scanning Probe Microscopy (ICSPM25)’, Atagawa Heights, Shizuoka, Japan, (December 7-9, 2017).

[9] Kentaro Watanabe, Koudai Kaneko, and Yoshiaki Nakamura,

“Monolithic thermoelectric modules fabricated on Si substrates”

S4-55, ‘The 25th International Colloquium on Scanning Probe Microscopy (ICSPM25)’, Atagawa Heights, Shizuoka, Japan, (December 7-9, 2017).

[8] Takafumi Ishibe, Atsuki Tomeda, Kentaro Watanabe, Yoshiaki Nakamura,

“THERMOELECTRIC PERFORMANCES CONTROLLED BY NANOSCALE INTERFACES IN TRANSPARENT EMBEDDED-ZNO NANOWIRES STRUCTURE”,

PW.65, ‘The 17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS 2017)’, Kanazawa, Japan, (November 14 – 17, 2017).

[7] Shunya Sakane, Kentaro Watanabe, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Yoshiaki Nakamura,

“ENHANCEMENT OF THERMOELECTRIC PROPERTIES BY EPITAXIAL NANODOTS IN Si FILMS”,

PW.75, ‘The 17th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS 2017)’, Kanazawa, Japan, (November 14 – 17, 2017).

[6] Atsuki Tomeda, Takafumi Ishibe, Kentaro Watanabe, and Yoshiaki Nakamura,

“Dependence of thermoelectric properties of Ga-doped ZnO films on various crystal properties”

A5-P29-012, ‘International Union of Materials Research Sciences – The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)’, Kyoto, Japan, (Aug 27 – Sep 1, 2017).

[5] Tatsuhiko Taniguchi, Hiroki Miyamoto, Kentaro Watanabe, and Yoshiaki Nakamura,

“Growth-method-dependent thermoelectric properties of epitaxial Ge/Si(001) thin films”

A5-P29-034, ‘International Union of Materials Research Sciences – The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)’, Kyoto, Japan, (Aug 27 – Sep 1, 2017).

[4] Takafumi Ishibe, Atsuki Tomeda, Kentaro Watanabe, Yoshiaki Nakamura,

“Ga-Doped ZnO Films for Transparent Thermoelectric Materials with High Power Factor”,

P124, ‘The 36th International Conference on Thermoelectrics (ICT 2017)’, Pasadena, USA, (July 31 – Aug 3, 2017).

[3] Shunya Sakane, Kentaro Watanabe, Takeshi Fujita, Kentarou Sawano, Takeyuki Suzuki, Yoshiaki Nakamura,

“Thermoelectric Properties of Si Films Containing Epitaxial Nanodots of Various Materials”,

P197, ‘The 36th International Conference on Thermoelectrics (ICT 2017)’, Pasadena, USA, (July 31 – Aug 3, 2017).

[2] Yoshiaki Nakamura, Kosuke Mitarai, Ryo Okuhata, Kentaro Watanabe,

“Development of Thermal Conductivity Measurement Method Applicable to Thin Bulk Materials Based on 2ω Method”,

P323, ‘The 36th International Conference on Thermoelectrics (ICT 2017)’, Pasadena, USA, (July 31 – Aug 3, 2017).

[1] Kentaro Watanabe, Shuto Yamasaka, Takafumi Ishibe, Shunya Sakane, Kentarou Sawano, and Yoshiaki Nakamura,

“Independent control of phonon and electron transport in Si-based nanoarchitectures with epitaxial Ge nanodots”

P00204, ‘The 1st Asian Conference on Thermal Sciences (ACTS 2017)’, Jeju Island, Korea, (March 26-30, 2017).


2016

[6] Shunya Sakane, Kentaro Watanabe, Tatsuhiko Taniguchi, Masayuki Isogawa, Shuto Yamasaka, Shinya Tsurusaki, Shotaro Takeuchi, Akira Sakai, and Yoshiaki Nakamura

“Size and shape control of epitaxial β-FeSi2 nanodots in Si-based nanoarchitecture toward advanced thermoelectric materials”

17-P33, ‘Asia-Pacific Conference on Semiconducting Silicides and Related Materials’, Nishijin Plaza, Kyusyu University, Fukuoka, Japan (July 16-18, 2016).

[5] Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Kentaro Watanabe, Takeyuki Suzuki, Takeshi Fujita, and Yoshiaki Nakamura

“The Growth of High Quality Epitaxial β-FeSi2 Thin Films by Solid Phase Epitaxy”

17-P34, ‘Asia-Pacific Conference on Semiconducting Silicides and Related Materials’, Fukuoka, Japan, (July 16-18, 2016)

[4] Kentaro Watanabe, Shuto Yamasaka, Shunya Sakane, Kentarou Sawano, and Yoshiaki Nakamura,

“Independent control of phonon and electron transport in Si films including epitaxial Ge nanodots”

4B.6,‘The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT2016)’, Wuhan, P. R. China, (May 29–June 2, 2016).

[3] Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Kentaro Watanabe, Takeyuki Suzuki, Takeshi Fujita, and Yoshiaki Nakamura

“Thermoelectric properties of epitaxial β-FeSi2 thin films/Si(111)”

P081, ‘The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT2016)’, Wuhan, P. R. China, (May 29–June 2, 2016).

[2] Takafumi Ishibe, Kentaro Watanabe, Takeshi Fujita, and Yoshiaki Nakamura,

“Novel ZnO-based buried nanowire structure for high performance thermoelectric materials”

P199, ‘The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT2016)’, Wuhan, P. R. China, (May 29–June 2, 2016).

[1] Ryo Okuhata, Kentaro Watanabe, Satoaki Ikeuchi, Akihiro Ishida, and Yoshiaki Nakamura

“Developement of 2ω method with high versatility applicable to thermoelectric thin films”

P299, ‘The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT2016)’, Wuhan, P. R. China, (May 29 – June 2, 2016).


2015

[4] Shunya Sakane, Kentaro Watanabe, Masayuki Isogawa, Shotaro Takeuchi, Akira Sakai and Yoshiaki Nakamura

“Observation of covering epitaxial β-FeSi­­2 nanodots with Si for fabricating Si/β-FeSi­­2 nanodots stacked structures”

23rd International Colloquium on Scanning Probe Microscopy, S4-21, Hilton Niseko Villege, (Dec. 10-12 2015).

[3] Takafumi Ishibe, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai and Yoshiaki Nakamura

“Epitaxial growth of iron oxide nanodots on Si substrate using Fe-coating Ge nuclei”

23rd International Colloquium on Scanning Probe Microscopy, S4-36, Hilton Niseko Villege, (Dec. 10-12 2015).

[2] Yoshiaki Nakamura, Tomohiro Ueda, Masahiro Isogawa, Shuto Yamasaka, Shotaro Takeuchi, and Akira Sakai,

“Thermal conductivity reduction and carrier doping in the Si nanoarchitecture including epitaxial nanodots”

14B.7, ‘34th Annual International Conference on Thermoelectrics & 13th European Conference on Termoelectrics (ICT&ECT2015)’, International Congress Center, Dresden, Germany, (June 28-July 2, 2015).

[1] Shuto Yamasaka, Yoshiaki Nakamura, Shotaro Takeuchi, and Akira Sakai,

“Phonon scattering control by structure of epitaxial Ge nanodots in Si”

PA175, ‘34th Annual International Conference on Thermoelectrics & 13th European Conference on Termoelectrics (ICT&ECT2015)’, International Congress Center, Dresden, Germany, (June 28-July 2, 2015).


2014以前

[] S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi and A. Sakai,

“Introduction of Ultrahigh Density Ge Nanodots into Si Films for Si Based Thermoelectric Materials”,

1st Kansai NanoScience and Nanotechnology International Symposium, Osaka, Japan, Feb. 4 2014.

[] S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi, and A. Sakai,

“Thermal and electrical properties of Si films including epitaxial Ge nanodot phonon-scatterers”,

International Conference on Thermoelectrics – ICT2014, Nashville, Tennessee, July 6-10, 2014.

[] Tomohiro Ueda, S. Takeuchi, Y. Yamamoto, S. Arai, T. Tanji, N. Tanaka, A. Sakai,

“Introduction of Ge nanodots in Si films as phonon scatterers and the thermal conductivity reduction”, Shuto Yamasaka, Yoshiaki Nakamura*,

The 32nd International Conference on Thermoelectrics, Kobe, Japan,

July 1, 2013.

[] M. Isogawa, Y. Nakamura*, J. Kikkawa, S. Takeuchi and A. Sakai,

“Epitaxial growth of stacked β-FeSi2 nanodots on Si substrates and their thermoelectric properties”

Asia-Pasific Conference on Green Technology with Silicides and Related

Materials, Tsukuba, Japan, July 29, 2013.

[] Y. Nakamura, M. Isogawa, T. Ueda, J. Kikkawa, A. Sakai,

Formation technique of stacked epitaxial Si nanodot structures and their thermal conductivity”,

2012 Materials Research Society Fall Meetings,Nov, 2012.

PAGETOP